Abstract
GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability. This paper demonstrates technology of GaN-on-Si normally-on and normally-off transistor with different p-GaN cap-layer thickness as well as simulation of these devices. The simulation data confirm experimental results. P-GaN cap-layer thickness affects the current channel density: the more p-GaN thickness, the less channel density. The fabricated transistors have a maximum drain current in open state of about 800 mA/mm.
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