GaN layer growth by HVPE on m‐plane sapphire substrates

Abstract

AbstractSemipolar GaN layers were grown on m‐plane sapphire substrates by HVPE. Insertion of AlxGa1–xN (x ∼ 0.1‐0.6) layer in‐between m‐plane sapphire substrate and GaN layer promoted to improve crystalline quality and to grow of semipolar (11‐22) plane GaN layers. X‐ray diffraction (11‐22) ω‐scan rocking curve FWHM of 298 arcsec was measured for a 30 μm thick (11‐22) GaN layer. Depending on growth conditions, m‐plane GaN layer having micro‐crystallites of other orientations (mainly of (11‐24) plane GaN layer) was also grown. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)