Abstract
III-nitride-based semiconductors can provide a wide range of bandgap energies. That enables GaN lasers to lase in wide spectral range. In this section, after the brief overview on the group III-nitrides, AlGaN laser diodes for ultraviolet region and InGaN laser diodes for visible region are described. The AlGaN laser diodes set into markets through a stage of research and development even though the difficulties in crystal growth. The InGaN laser diodes are already available for consumer and industrial markets such as Blu-ray disk with violet laser diodes, material processing with high power blue laser diodes and full-color laser displays with green laser diodes. Impacts on device characteristics caused by unique nature of the nitrides are also mentioned.
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