GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz

Abstract

This work describes the integration of Schottky diodes into fast GaN MMIC process technology suitable for the realization of switch-mode power amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called third-quadrant issue, which reduces the efficiency in band pass-Δ-Σ class-S operation can be diminished on device level. Compared to a hybrid diode assembly, the broadband properties of the amplifier module with on-chip-integrated diode can be improved by the reduction of parasitic losses. The GaN heterostructure field effect transistors (HFETs) with integrated series diode show a cut-off frequency of 28 GHz with drain breakdown voltages exceeding −100 and +100 V and comparable large signal performance to conventional GaN HFETs at 10 GHz. MMIC core chips for class-D and class-S switch-mode power amplifier modules are demonstrated for the operation at mobile communication frequencies between 0.45 and 2 GHz and signal bit rates up to 8 Gbps. The circuits yield broadband output power levels between 4 and 9 W with efficiencies of up to 80%.