Abstract
Abstract This paper presents a design methodology for a broadband high-efficiency power amplifier (PA). The large available impedance space of the extended continuous Class-GF mode is employed. A novel output matching network of the PA consisting of a rectangular double transmission line structure is proposed to meet impedance requirements. To validate the effectiveness of this structure, a high-efficiency PA operating in 0.8–3.0 GHz is designed using a CGH40010F GaN transistor. The measured results demonstrate that the drain efficiency falls within the range of 63.2%–71.9%, the output power varies from 40.2 to 42.2 dBm, and the gain ranges from 9.4 to 11.3 dB within the frequency band of 0.8–3 GHz. The realized PA exhibits an extremely competitive relative bandwidth of 115.8%.
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