Abstract
Abstract This paper presents a design and fabrication of Ku-band power amplifier using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die. In order to fabricate the low-cost Ku-band power amplifier, a Printed Circuit Board(PCB) was used for input/output matching circuits instead of manufacturing process to use an expensive substrate. The measured output power is 42.6 dBm, the drain efficiency is 37.7 % and the linear gain is 7.9 dB under pulse operation at the frequency of 14.8 GHz. Under the continuous wave(CW) test, the output power is 39.8 dBm, the drain efficiency is 24.1 % and the linear gain is 7.2 dB.Key words: Ku-Band, GaN HEMT Die, Low-Cost, Power Amplifier LMN62013OPQRSA8MN#(TU$%MNVIW.X YZ [\]^[ (Department of Wireless Communications Engineering, Kwangwoon University) *QRSA8(Samsung Thales) Manuscript received February 4, 2014 ; Revised March 11, 2014 ; Accepted April 16, 2014. (ID No. 20140204-016)Corresponding Author: Jin-Joo Choi (e-mail: jinchoi@kw.ac.kr)
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