Abstract
This paper presents a 10 GHz to 18 GHz power amplifier (PA) using 0.25-μm gallium nitride high electron mobility transistor (GaN HEMT) technology. An asymmetric magnetically coupled resonator (MCR) technique is proposed to enhance the broadband frequency response. The theory and design procedures are illustrated in the paper. This PA delivers saturated output power greater than 36 dBm with power-added efficiency (PAE) greater than 20% from 11 GHz to 17 GHz. The small signal gain varies from 18.5 dB to 21.5 dB over the frequency range of 10-18 GHz and the peak gain is 21.5 dB at 16 GHz. The chip size of this PA is 1.8 mm × 1.5 mm. The PA shows a broad fractional bandwidth and a compact chip size among Ku-band PAs in GaN technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
