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Abstract
AlGaN-based light emitting diodes (LEDs) are expected to be the next generation of ultraviolet light (UV) sources. With the aim of achieving AlGaN-based UV-LEDs comparable to those of conventional blue and red LEDs, we have investigated the regular epitaxial growth, the fabrication of uniform and abrupt heterointerfaces, the optical characteristics of AlGaN-based nitride quantum structures, the validity of the band engineering, the p-n junction designs, radiative recombination and light extraction. Efficient and transparent UV-LEDs grown on a high-quality AlN-template layer on a sapphire substrate are free from binary GaN, and have great potential for lighting equipment and other applications. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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