Abstract
The d.c., microwave, and high-temperature characteristics of Si-doped MESFETs with and without n + ohmic contact layers, Si 3N 4 GaN MISFETs, and AlN GaN HFETs are presented. The highest transconductance and microwave performance were observed for 1 μm gate-length HFETs. These HFETs have a transconductance of 45 mS/mm, an ƒ τ of 8 GHz, and an ƒ max of 22 GHz. The Si-doped MESFETs have good pinch-off characteristics at 400°C and are operational at 500°C. Published by Elsevier Science Ltd.
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