GaN based heterostructure for high power devices

Abstract

We discuss the potential of GaN-based field effect transistor for high-power, high-temperature operation. At room temperature, the GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operation among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. CW operation at 10 and 15 GHz was also recently reported. Monte Carlo simulations indicate that short-channel GaN devices should have transported superior even to GaAs. However, improved thermal and microwave designs are required in order to take advantage of these material properties for applications in high power devices.