Abstract
GaN-based FinFET with double-channel AlGaN/GaN heterostructure is proposed. The current and transconductance characteristics of the device are simulated by Sentaurus software. The simulation results show that the GaN-based FinFET with double channel has higher saturation current and better linearity. The application of double-channel structure improves the saturation current and the control ability of the gate with the aid of triple gate. The combination of FinFET and double channel presents a novel structure for high-performance device. Furthermore, the enhancement-mode device can also be obtained by optimising the Fin width of the device.
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