Abstract

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultra-violet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for photonic circuits. Quality factors up to 410,000 are demonstrated with microring resonators in the near-infrared spectral range. We emphasize the peculiar advantages of these bilayers for nonlinear photonics: GaN offers a larger nonlinear susceptibility as compared to AlN. More importantly, both materials exhibit nonlinear susceptibilities with opposite signs that can be advantageous for nonlinear conversion. Thick epitaxial III-nitride bilayers are associated with the occurrence of cracks in the epi-layers and multimode waveguide propagation. We show that the multimode character can lead to peculiar resonance line shapes with the capacity to control full transmission and reflection by phase engineering.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.