Abstract
The disadvantages of the conventional technique for measuring gamma-radiation spectra in thick single crystals under the multiple generation of gamma-quanta by a single electron are described. New data on characteristics of gamma-radiation generated by 1.2 GeV electrons in aligned silicon single crystals with the thickness values 15, 30 and 63 mm are reported. We have obtained them by applying the technique of measuring the spectra of gamma-quanta, enabling one to obtain “true” spectra free from distortions due to the multiple generation of gamma-quanta. The maximum spectral density of radiation in the energy range ω≅15–20 MeV is shown to be obtained for a silicon crystal 30 mm thick, this value being optimum for the conditions given.
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