Abstract
The effect of \ensuremath{\Gamma}-X mixing on electron quasi-bound-state lifetimes in GaAs/AlAs symmetric double-barrier heterostructures is studied theoretically using an empirical tight-binding band-structure model. It is found that the \ensuremath{\Gamma} quasi-bound-state tunneling times can be shortened or lengthened by \ensuremath{\Gamma}-X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the \ensuremath{\Gamma} and X conduction channels in the AlAs barriers.
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