Abstract
The effect of Γ–X mixing on electron tunneling time in GaAs/AlAs symmetric double barrier heterostructures is studied theoretically using an empirical tight-binding band structure model. It is found that the Γ quasibound state tunneling times can be shortened or lengthened by Γ–X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the Γ and X conduction channels in the AlAs barriers.
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