Abstract
The low-temperature photoluminescence properties of Cd0.9Zn0.1Te thin film grown on CdTe substrate were investigated in the connection with the dependencies on different doses of γ-irradiation. It was obtained that γ-irradiation leads to the substantial changes in the photoluminescence properties of the Cd0.9Zn0.1Te/CdTe system. At first, it induces the rise of the intensities of the near-band-edge photoluminescence emission lines at the doses lower than 50kGy due to the improving of the crystalline quality of the films. At high doses it leads to the decrease of the intensities of observed photoluminescence lines because of disordering of the crystalline structure. Secondly, γ-irradiation induces the redshift in the energy peak positions of all observed emission lines, which is caused by relaxation of the strain in the layers of Cd0.9Zn0.1Te film near CdTe substrate.
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