Abstract
AbstractThe effect of gamma irradiation on two types (superstrate‐ and substrate‐type) of CdS/CdTe photodiodes, which we have proposed as potential photoconducting films for compact image sensors with a field emitter array (FEA), was investigated. A 60Co gamma‐ray source was employed, and the total gamma irradiation dose was more than 500 kGy. For the superstrate‐type structure, the irradiation caused the short‐circuit current density (JSC) to decrease, probably due to the resulting decreased transmittance of the glass substrate. On the other hand, little degradation of the I ‐V characteristics or spectral response was observed after the gamma irradiation for the substrate‐type structure. These results suggest that, taking into account the decrease in transmittance of the glass substrate, the CdS/CdTe photodiodes have sufficient tolerance to high gamma‐ray exposure. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have