Abstract
In the present work γ-irradiation induced optical band gap variations (Δ E opt) were investigated on Ge–As–Se and Ge–As–Se–Te chalcogenide glasses. Higher doses of γ-irradiation resulted in decreased E opt, which was composition dependent. Especially, glasses with stoichiometric compositions showed different Δ E opt from nonstoichiometric glasses under the same irradiation conditions. There seemed existence of a threshold E opt (TE) under the certain dose of irradiation below which Δ E opt hardly occurred. Results were interpreted from viewpoint of glass structure, Chemical Bond Approach (CBA) and localized states density theory. Raman analysis supported well these discussions.
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