Abstract
The crystallization kinetics of glassy Se 78− x Ge 22Bi x (0 ≤ x ≤ 10) and Se 80− x Ge 20In x (0 ≤ x ≤ 15) alloys has been studied by an isothermal method. For this purpose, conductivity measurements are done during isothermal annealing at various temperatures between the glass transition and crystallization temperatures. Avrami's equation is used to calculate the activation energy of crystallization ( E c). The composition dependence of E c in these alloys has been discussed using chemical bond approach.
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