Abstract
In this work, we investigate the gamma radiation effects on the optical properties of δ-Si-doping InGaAs/GaAs/AlGaAs High Electron Mobility Transistors (HEMT) grown by molecular beam epitaxy on (100) oriented GaAs substrates. Photoluminescence measurements are used to determine electron and hole relaxation process in the InGaAs/GaAs/AlGaAs (δ-Si) HEMTs. For more information about the carriers dynamics in the examined structures, we studied their interactions with the crystal lattice, defects and thermal activation through the analysis of the PL spectrum evolution depending on the temperature. With a treatment of 10 KGy the PL measurements prove a stability in activation energy and Debye temperature and a strongly affected for phonons contributions.
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