Abstract
We report on an experimental investigation of gamma radiation effects on the electronic and optical properties in carbon delta-doping GaAs/AlGaAs High Electron Mobility Transistors (HEMT) structures. Photoluminescence measurements are used to determine the electron-hole relaxation processes in the GaAs channel. For global information on the carriers dynamics in the structures examined, we studied their interactions with the crystal lattice, thermal activation states defects, the energy level activation. Gamma radiation has changed the electronic and optical properties in GaAs/AlGaAs structures, especially the carriers thermal activation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Optik - International Journal for Light and Electron Optics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
