Abstract

Gamma-ray irradiation hardness of a millimeter-wave low noise AlGaAs/InGaAs pseudomorphic HEMT (PHEMT) is investigated for space-bone applications. Gamma-ray is irradiated to a 50 GHz-band monolithic PHEMT low noise amplifier under d.c. biasing, and the change of d.c. and RF performances are investigated. No degradation of RF performances are observed up to 10 7 rad even at millimeter-wave frequency band. It suggests that the PHEMT has over a hundred year of life against gamma-ray irradiation in the space environment. The small signal gain decrease as low as 0.5 dB at 10 8 rad dose. The degradation mechanism is also discussed from an equivalent circuit analysis of gamma ray irradiated PHEMT's S-parameters.

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