Abstract
AbstractExpressions for the independent galvanomagnetic resistance tensor components in weak magnetic fields are obtained for p‐Te type semiconductors, using a variational method. Carrier scattering by optical lattice vibrations is considered without using the relaxation time approximation. With p‐Te as an example, the temperature dependence of the tensor components is studied both theoretically and experimentally for temperatures between 77 and 300°K. From comparison between the calculated and measured values of components, the constants for carrier interaction with polar optical phonons are estimated.
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