Abstract
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films..
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
