Abstract
The role of the residual resistivity ratio (RRR) measurements in the determination of the carrier concentration of tin and lead doped bismuth samples is discussed. The carrier density and the corresponding atomic pergentages of some of the samples understudy were determined by measuring the high-field Hall coefficient at 4.2K. The dependence of the transverse magnetoresistance on the magnetic field up to 2.2T is reported at low temperatures. The effect of the concentration to this behaviour is investigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
