Abstract
Nanocrystalline GaN has been synthesized from the solid-state reaction of GaI 3 and NaN 3 using I 2 as heat sink and diluting the reactants. X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) revealed that the synthesized GaN crystallized in a hexagonal crystal structure and displayed spherical particles with an average size of 30 nm. X-ray photoelectron spectra (XPS) of the powder sample of as-prepared GaN gave the surface stoichiometry of GaN 0.94. Room temperature photoluminescence (PL) spectrum showed that as-prepared GaN had one broad weak emission peak at 365 nm. The influence the addition of I 2 had on the formation of GaN was investigated, and a possible reaction mechanism was also discussed.
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