Abstract
In this study, nanocrystalline GaN was synthesized through a metathesis reaction at room temperature. The microstructure of the GaN was examined by using X-ray diffraction (XRD), and transmission electron microscopy (TEM) showed a single phase with wurtzite structure. High-resolution TEM (HRTEM) images showed that defects were formed in the as-prepared GaN nanocrystals. Room-temperature photoluminescence (PL) spectra showed a near-band-edge emission at 356 nm (3.48 eV), as well as visible light emission at 420 ∼ 460 nm (2.70 ∼ 2.95 eV). An increase in the intensity of the visible light peak was observed when the as-prepared specimen was annealed at 850 °C for 3 hrs, which was due to an increase in the numeric density of defects caused by de-passivation of impurities during annealing. Therefore, visible light emission in the GaN nanocrystals can be concluded to the induced by defects (possibly N vacancies) in the structure.
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