Abstract
In several power electronics applications, gallium nitride (GaN) has established itself as a competitive alternative to silicon. However, the pricey growing epitaxial processes used in present GaN deposition procedures highlight the need for more accessible and alternative deposition methods. This study compared the use of indium tin oxide (ITO) and fluorine tin oxide (FTO) electrodes from a solution containing 0.1 M gallium nitrate (Ga(NO3)3) and 2.5 M ammonium nitrate (NH4NO3). Gallium nitride thin films were synthesized by potentiostatic electrochemical deposition (PECD). Chronoamperometry (CA) was used to start the ITO and FTO thin film investigation at various time scales, from one hour to four hours, and with a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). Characterization methods showed that the electrode and PECD durations were related to the characteristics of the GaN thin film. The films crystallized in the wurtzite hexagonal structure in accordance with the 33o, 36o, and 46o X-Ray Diffraction (XRD) peaks. The impacts of deposition duration on the morphology and structure have a dependence on growing time, as shown by scanning electron microscopy (SEM) analysis. Grain boundaries of varying sizes on ITO and uniform particles formed on FTO, respectively, beginning at two hours PECD. The coexistence percentages of gallium (Ga) and nitrogen (N) in these plate-like films were determined by means of energy dispersive spectroscopy. After four hours, the largest Ga weight percentage was found on FTO at 65%, and after two hours, on ITO at 10%. The mixed phonon modes of hexagonal and cubic GaN were detected in the Raman spectra.
Published Version
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