Gallium Nitride, Bulk

Abstract

Microelectronic and optoelectrical applications implicating gallium nitride have turned out a challenge however, their advance is restricted as result of a lack of appropriate substrates. This article investigates in the crystal development of gallium nitride, the procedures directing to GaN bulk crystal being considerably increased in the previous decade. The studied approaches are: (1) high-pressure solution growth of bulk GaN crystals, (2) low-pressure synthesis and growth of polycrystalline GaN, and (3) synthesis and growth of GaN by vapor reaction processes.