Abstract
Direct measurements of the desorption rate of gallium from GaAs and (Al,Ga)As during growth by molecular beam epitaxy at high temperatures have been made by modulated beam mass spectrometry. The activation energy for desorption is dependent upon the nature of the site from which the gallium is lost. From free gallium atoms not incorporated into the lattice, behavior similar to that encountered under equilibrium conditions for gallium over gallium or gallium over GaAs is observed. For gallium lost from the GaAs lattice the apparent activation energy is higher and is influenced by the arsenic flux reaching the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
