Abstract
An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 10 12 cm −2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
