Gallium arsenide large scale integrated circuits

Abstract

Large scale digital integrated circuits containing over 6000 active devices (1 μm MESFETs and Schottky diodes) have recently been achieved in GaAs Schottky Diode FET Logic. The planar, ion implanted process used to fabricate these circuits results in very uniform device properties because of the excellent control of critical device interfaces. The present status of LSI GaAs ICs is reviewed, including a description of the performance of an 8×8 bit multiplier LSI circuit. VLSI circuit prospects and the applicability of new high speed GaAs active devices for VLSI application in GaAs are considered.