Abstract
Gallium arsenide diodes were made which had Schottky-barriers for both contacts. Devices which were too thick for space change reach-through to occur at breakdown showed microwave oscillations, while thin diodes did not oscillate. Additionally, the structures could be distinguished on the basis of the noise accompanying breakdown. The performance was analysed in terms of transistor theory in which there is avalanche multiplication in the collector space charge region. It was concluded that there is a smooth transition between the reachthrough breakdown characteristic of the BARITT and true avalanche breakdown. The nature of the breakdown depends on the base width and the emitter efficiency.
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