Abstract
We report on n- and p-type doping of MOVPE-grown ZnSe layers on GaAs substrates by implantation with gallium or nitrogen and subsequent annealing. The samples were analyzed by Hall measurements, photoluminescence, Raman scattering and far-infrared reflectivity. For Ga implantation a free-carrier concentration in ZnSe of about n = 10 17 cm –3 is achieved. Furthermore, we observe that the annealing procedure leads to a considerable diffusion of Zn across the epilayer–substrate interface into the GaAs substrate, resulting in a highly p-type layer of about 1 μm thickness. This interface layer complicates the analysis of p-type ZnSe layers. However, nitrogen incorporation is evident from SIMS measurements and PL spectra.
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