Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe

Abstract

The results on photo-assisted MOVPE of ZnSe films using an Ar ion laser as an irradiation source are reviewed. An Ar ion laser is a useful irradiation source for studying the growth mechanism because it has several monochromatic lines above and below the fundamental absorption edge of ZnSe. It is shown that the growth parameters, such as the energy and power of photons, the growth temperature, ambient hydrogen gases, the presence of a buffer layer and its quality, etc., affect the film growth. Next, a growth model using an energy band diagram is proposed, in which excess holes photo-induced in the ZnSe layer play an important role in the growth rate enhancement. Finally, a brief discussion is given on how the excess holes contribute to the dissociation of the precursors through photo-catalytic reaction on the ZnSe surface.