Abstract
Tapered lasers fabricated from a GaInAsSb-AlGaAsSb single-quantum-well structure are reported. The laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 50 A/cm/sup 2/ at room temperature. Tapered lasers have exhibited diffraction-limited continuous-wave output power up to 600 mW.
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