Abstract
An interband cascade (IC) laser structure with an emission wavelength designed to be near 11μm was grown by molecular beam epitaxy on an InAs substrate. Defects and surface smoothness, as well as the overall crystalline quality, were characterized by optical microscopy, atomic force microscopy and X-ray diffraction. The maximum operating temperatures of a broad-area IC laser device in CW and pulsed modes were 97K and 130K, respectively, at an emission wavelength of 11μm, which is the longest wavelength among interband lasers based on III–V semiconductor materials. The pulsed threshold current density at 80K was measured to be 72A/cm2. The performance of this IC laser device may be limited by intersubband absorption loss in the active region and an unidentified carrier leakage channel.
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