Abstract
Recent improvements in mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGa(As)Sb on GaSb and InAs substrates are reported. GaInAsSb and InAsSbP p/n detector and AlGaAsSb/GaInAsSb avalanche photodiode (APD) structures have been fabricated. Results from previously reported devices were improved by the addition of high bandgap window layers for GaInAsSb detectors and a new longer-wavelength composition for InAsSbP detectors. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometer and 3.2 micrometer respectively. Room temperature Johnson noise- limited detectivities (D* JOLI ) of 5 X 10 10 cmHz 1/2 /W for GaInAsSb detectors and 4 X 10 9 cmHz 1/2 /W for InAsSbP have been measured. Room- temperature avalanche multiplication gain was measured for AlGaAsSb/GaInAsSb avalanche photodiodes.
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