GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth

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1.5-µm-wavelength GaInAsP/InP strain-compensated 5-layered quantum-wire lasers with the wire width of 23 nm in the period of 80 nm were realized by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. The energy blue shift at the peak wavelength was observed to be 38 meV, which was much larger than the calculated value, and the spontaneous emission spectral width was almost constant at temperatures between 103 K and 263 K, indicating a lateral quantum confinement effect. While the threshold current density was about 50% higher than that of a 5-quantum-well laser fabricated from the same initial wafer, the differential quantum efficiency was almost the same as that of the 5-quantum-well laser up to 85°C.