Abstract
Near-infra-red (760–780 nm) vertical-cavity surface-emitting laser (VCSEL) diodes with GaInAsP-based active-region heterostructures are demonstrated for the first time. The devices consist of GaInAsP/GaInP/AlGaInP-based quantum-well active regions and AlAs/Al0.25Ga0.75As distributed Bragg reflectors. Different-sized devices emitting in the 760–780 nm-wavelength range exhibit threshold currents in the 3–10 mA range, threshold voltages of 2.1 V and peak power output > 4 mW.
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