GaInAs/AlGaInAs DH and MQW lasers with 1.5–1.7 μm lasing wavelengths grown by atmospheric pressure MOVPE

Abstract

The first successful growth and fabrication of long wavelength (1.5–1.7 μm) DH and MQW lasers by atmospheric pressure MOVPE in a ‘phosphorus-free’ material system is reported. The GaInAs/AlGaInAs DH and MQW lasers were grown on InP substrates. DH lasers emitting at around 1690 nm exhibit threshold current densities down to 2.8 kA/cm2 at 25°C; the characteristic temperature is 50 K in the 15–55°C range. First MQW lasers with 1565 nm emission wavelength have threshold current densities around 3.2 kA/cm2.