GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

Abstract

Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN/sub x/As graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular quantum-wells. A 1240-nm emitting IML laser has been achieved with a low-threshold current density (200 A/cm/sup 2//well) and a relatively high characteristic temperature (T/sub o/=100 K). The IML structure is very promising for long wavelength GaAs-based laser applications.