Abstract
It is demonstrated that chemical beam epitaxy (CBE) is suitable for growing high quality GaInAs(P)/InP heterostructure bipolar transistors. Step-graded double-heterostructure bipolar transistors with very thin base (150 Å) and very high p doping (∼5×1019 cm−3), and with an added ‘‘grading layer’’ of 200 Å GaInAsP (Eg =0.94 eV) between the GaInAs/InP base-collector junction, have shown good current drive capability and excellent current gain ( β=2500). In addition, CBE-grown standard single-heterostructure bipolar transistors with a 1000 Å base and 2×1018 cm−3 p doping are characterized by high gain, β∼3500, which is only weakly dependent on the collector current.
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