Abstract
Optical gain switching is theoretically investigated in various InGaAs/InP coupled quantum well structures. Our calculations are based on the k ·p method with 6 ×6 Luttinger-Kohn Hamiltonian and on the density matrix formalism with intraband relaxation. Our results show that the gain of asymmetric coupled quantum wells (CQWs) is substantially reduced under electric field, compared with that of symmetric CQWs or single quantum well (SQW) structures. This is mainly attributed to the increase of the differences in the dominant transition energies due to the enhanced Stark effect. The asymmetric structures were obtained by varying the width or the depth of the two wells constituting the CQWs. Using these asymmetric CQWs, gain switching at lower voltage can be achieved.
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