Abstract
Optical gain switching is theoretically investigated in various InGaAs/InP coupled quantum well structures. Our calculations are based on the k ·p method with 6 ×6 Luttinger-Kohn Hamiltonian and on the density matrix formalism with intraband relaxation. Our results show that the gain of asymmetric coupled quantum wells (CQWs) is substantially reduced under electric field, compared with that of symmetric CQWs or single quantum well (SQW) structures. This is mainly attributed to the increase of the differences in the dominant transition energies due to the enhanced Stark effect. The asymmetric structures were obtained by varying the width or the depth of the two wells constituting the CQWs. Using these asymmetric CQWs, gain switching at lower voltage can be achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
