Abstract
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device.
Highlights
Currently, GaInNAs [1] quantum wells (QWs) grown on GaAs substrates are subject to wide interest, mainly for applications as vertical-cavity surface-emitting lasers and vertical-cavity semiconductor optical amplifiers (VCSOAs) for operation at the 1.3-μm wavelength region
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels [6,7]
The MQWs are placed at the antinodes of the electric field in the 3λ/2 cavity to ensure maximum optical gain at the emission wavelength of 1.3 μm (Figure 2b)
Summary
GaInNAs [1] quantum wells (QWs) grown on GaAs substrates are subject to wide interest, mainly for applications as vertical-cavity surface-emitting lasers and vertical-cavity semiconductor optical amplifiers (VCSOAs) for operation at the 1.3-μm wavelength region. Background Currently, GaInNAs [1] quantum wells (QWs) grown on GaAs substrates are subject to wide interest, mainly for applications as vertical-cavity surface-emitting lasers and vertical-cavity semiconductor optical amplifiers (VCSOAs) for operation at the 1.3-μm wavelength region. These devices have numerous advantages over edge-emitting lasers and SOAs including less temperature sensitivity [2], high coupling efficiency to optical fiber (low noise figure), and low power consumption and cost.
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