Abstract
The InGaN quantum-well diode laser is now reaching the threshold of commercial availability as an edge emitting blue/violet device, yet many questions remain concerning the details of its operation. For example, the threshold current density in the best cw InGaN QW lasers is still about one order of magnitude larger than that in the green ZnCdSe QW diode devices, in spite of the materials being quite similar in the effective mass band picture. On the one hand, the nitride semiconductors are remarkably tolerant of built-in crystalline defects at high current densities. On the other, the microscopics of optical gain are significantly influenced by crystalline `disorder’ that emanates from indium compositional anomalies in the active InGaN quantum-well material.
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