Abstract
A very effective method for power gain improvement of microwave static induction transistors (SITs) has been proposed and examined. The authors have found that self-neutralization occurs in common-gate configuration of an SIT. This arises from resonance of a gate-grounding inductance and a stray capacitance between electrodes of an SIT chip, and cancels out undesirable feedback components. By applying the self-neutralization technique, high gain SITs such as a 1 GHz-10 W SIT of 12 dB gain, a 2 GHz-5 W SIT of 9 dB gain and a 1 GHz-80 W SIT of 8 dB gain were obtained.
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