Gain- and Loss-Induced Topological Insulating Phase in a Non-Hermitian Electrical Circuit

Abstract

There have been considerable efforts devoted to the study of topological phases in certain non-Hermitian systems that possess real eigenfrequencies in the presence of gain and loss. However, it is challenging to experimentally realize such non-Hermitian topological insulators in either quantum or photonic systems, due to the difficulties in introducing controlled gain and loss. On the other hand, the wide choices of active circuit components provide us with unprecedented convenience and flexibility in engineering non-Hermitian topological insulators in electrical circuits. Here, we report experimental realization of a one-dimensional (1D) non-Hermitian topological circuit which exhibits topologically protected edge state purely induced by gain and loss. We show that by tuning the value of the positive/negative resistors in the circuit, our system can switch between different topological phase regions. The topological edge states and interface states are observed at the circuit edge and at the interface between a trivial and nontrivial circuit, which are manifested by a prominent impedance peak at the mid-gap frequency topologically robust to variations of circuit parameters. Our work opens a new gateway towards actively controllable topological systems.