Abstract
GaAsSb quantum wells (QWs) on GaAs substrate are proposed for the active layer of 1.3 /spl mu/m VCSELs. High-quality GaAsSb QWs showed intense 1.32 /spl mu/m photoluminescence at room temperature. Room-temperature pulsed operation of GaAsSb/GaAs broad stripe laser diodes at a wavelength of 1.22 /spl mu/m was demonstrated for the first time.
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