Abstract
On the background of a molecular beam epitaxy (MBE) machine viewport, a simplified representation of the Bi surface hopping mechanism is depicted for a GaAs surface exposed to an oscillating Bi flux. The exact behaviour of Bi on a growing surface is still the subject of some debate and oscillating fluxes appear to enhance Bi incorporation, potentially due to the increased likelihood of Bi – Ga bonds forming. These mechanisms are discussed in the Review by Robert D. Richards, Abdul R. Mohmad, and co-workers (see article number 2100330).
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
